GT30J101 2002-01-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT30J101 high power switching applications the 3rd generation enhancement-mode high speed: t f = 0.30 s (max) low saturation voltage: v ce (sat) = 2.7 v (max) maximum ratings (ta 25c) characteristic symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v dc i c 30 collector current 1 ms i cp 60 a collector power dissipation (tc 25c) p c 155 w junction temperature t j 150 c storage temperature range t stg 55~150 c unit: mm jedec D jeita D toshiba 2-16c1c weight: 4.6 g
GT30J101 2002-01-18 2 electrical characteristics (ta 25c) characteristic symbol test condition min typ. max unit gate leakage current i ges v ge 20 v, v ce 0 500 na collector cut-off current i ces v ce 600 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) i c 3 ma, v ce 5 v 5.0 8.0 v collector-emitter saturation voltage v ce (sat) i c 30 a, v ge 15 v 2.1 2.7 v input capacitance c ies v ce 20 v, v ge 0, f 1 mhz 2200 pf rise time t r 0.12 turn-on time t on 0.40 fall time t f 0.15 0.30 switching time turn-off time t off inductive load v cc 300 v, i c 30 a v gg 15 v, r g 43 (note1) 0.70 s thermal resistance r th (j-c) 0.81 c/w note1: switching time measurement circuit and input/output waveforms note2: switching loss measurement waveforms gt30j301 r g i c v ce l v cc v ge 10% 90% v ge v ce i c t d (off) t off t d (on) t r t on 0 0 t f 10% 10% 10% 90% 10% 90% 10% 90% v ge v ce i c e off e on 0 0 10%
GT30J101 2002-01-18 3 collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 100 80 60 40 20 0 0 1 2 3 4 5 v ge 10 v common emitter tc 25c 15 13 12 20 30 0 4 8 12 16 20 12 0 4 8 16 20 common emitter tc 40c 20 60 i c 10 a 20 16 12 8 4 0 0 4 8 12 16 20 common emitter tc 25c 20 60 i c 10 a 30 100 80 60 40 20 0 0 4 8 12 16 20 tc 125c common emitter v ce 5 v 25 40 4 3 2 1 0 60 20 20 60 100 140 common emitter v ge 15 v 60 i c 5 a 50 40 30 20 10 0 4 8 12 16 20 12 0 4 8 16 20 common emitter tc 125c 20 60 i c 10 a 30
GT30J101 2002-01-18 4 switching loss e on , e off (mj) switching time t off , t f ( s) gate resistance r g ( ) switching time t on , t r ? r g switching time t on , t r ( s) collector current i c (a) switching time t on , t r ? i c switching time t on , t r ( s) gate resistance r g ( ) switching time t off , t f ? r g switching time t off , t f ( s) collector current i c (a) switching time t off , t f ? i c gate resistance r g ( ) switching loss e on , e off ? r g collector current i c (a) switching loss e on , e off ? i c switching loss e on , e off (mj) 3 0.5 0.3 0.05 3 10 30 0.1 0.03 100 300 1000 t r t on common emitter v cc 300 v v gg 15 v i c 30 a : tc 25c : tc 125c 1 t f t off common emitter v cc 300 v v gg 15 v i c 30 a : tc 25c : tc 125c 3 0.5 0.3 0.05 3 10 30 0.1 0.03 100 300 1000 1 10 3 0.1 1 3 10 30 0.3 1 0.03 100 300 1000 e off e on common emitter v cc 300 v v gg 15 v i c 30 a : tc 25c : tc 125c note2 0 5 10 15 20 25 30 0.3 0.1 0.01 0.03 1 3 10 common emitter v cc 300 v v gg 15 v r g 43 : tc 25c : tc 125c note2 e off e on 5 10 0 0.3 0.1 0.01 0.03 10 15 20 25 30 t r t on common emitter v cc 300 v v gg 15 v r g 43 : tc 25c : tc 125c 1 3 0.5 0.05 0 5 10 15 20 25 30 0.3 0.1 0.01 0.03 1 3 10 common emitter v cc 300 v v gg 15 v r g 43 : tc 25c : tc 125c t f t off 5 0.5 0.05
GT30J101 2002-01-18 5 transient thermal impedance r th (t) (c/w) collector current i c (a) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) safe operating area collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th (t) ? t w 0.3 1 3 10 0.5 1 3 5 10 30 30 100 300 3000 1000 0.1 100 50 *: single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. i c max (pulsed) * i c max ( continuous ) dc o p eration 1 ms * 100 s * 50 s * 10 ms * 0.3 1 3 10 0.5 1 3 5 10 30 30 100 300 3000 1000 0.1 100 50 t j 125c v ge 15 v r g 43 capacitance c (pf) collector-emitter voltage v ce (v) c ? v ce 1 3 0.3 300 100 10 30 1000 3000 10000 10 30 100 300 1000 common emitter v ge 0 f 1 mhz tc 25c c ies c oes c res common emitter r l 10 tc 25c 0 0 20 40 60 80 100 0 4 8 12 16 20 100 200 300 400 500 v ce = 100 v 300 200 10 3 10 2 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 4 tc 25c
GT30J101 2002-01-18 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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